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Lars Helmersen
+45 72202359
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Danfysik has delivered a Model 1090 - 200 keV Ion Implanter for the Ion Beam Materials Research Laboratory at Los Alamos National Laboratory, New Mexico, USA
Beam energy
From 20 keV to 200 keVBeam current
From 0.1 to 0.5 mAMass analysis
Mass resolution M/ΔBeam focussing
Beam spot on target 5 mm diameterBeam scanning
Max. scan area 200 mm x 200 mm
200 keV Ion Implanter for IBML at LANL, New Mexico
Project start 2007. Project completion 2008.
The Ion Beam Materials Laboratory (IBML) is a Los Alamos National Laboratory resource devoted to material research through the use of ion beams. Current major research areas include surface characterization through ion beam analysis techniques, surface modification and materials synthesis through ion implantation technology, and radiation damage studies in gases, liquids and solids.
Danfysik has delivered and installed a 200KeV ion implanter at IBML. The implanter which was installed at the IBML site early in 2008 is equipped with a high current ion source model 921A which operates in gas, vapour or sputter configuration, to produce ions from virtually any element in the periodic tale. Typical operation will be from 20 to 200KeV, but implants up to 800KeV will be possible with multiple-charged ions. The implanter control system allows logging and storage of all parameters for later use. The implanter is delivered with a low-current beam line with two-axis electrostatic beam scanning and a target chamber with sample manipulator.
The installation is prepared for an optional high-current beam line with magnetic scanning, target heating and cooling capacity, which can be added at a later stage.
Lars Helmersen
+45 72202359
