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Lars Helmersen
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Danfysik has delivered a 350KeV ion implanter for the Ångström Laboratory at Uppsala University, Sweden
Specifications
Beam energy:
Up to350 keVBeam current:
From 0.1 to 1.0 mAMass analysis:
Mass resolution M/ΔBeam focussing:
Beam spot on target 5 mm diam.Beam scanning:
Scan area 150 mm x 150 mm
350KeV ion implanter for the Ångström Laboratory at Uppsala University, Sweden
Project start. 2003. Project completion 2004.
A 350 keV, 1mA ion implanter was delivered to the Angstrom Laboratory in Uppsala, Sweden. The implanter was designed and built over a well proven Danfysik basic concept for the model 1090 Ion Implanter, and deliver ion beams of all elements in the period table at currents < 1mA. The lowest energy reachable with a decelerate system is ~50 eV, while the highest energy, E, depends on the charge state q of the extracted ions from the ion source ( E= 350*q keV). An automatic scanning system handling 2, 4 and 6-inch wafers is available. The implanter is equipped with a high current ion source model 921A which operates in gas, vapour or sputter configuration, to produce ions from virtually any element in the periodic tale. The implanter control system allows logging and storage of all parameters for later use. The implanter is delivered with a low-current beam line with two-axis electrostatic beam scanning and a target chamber with sample manipulator.